NAND512R3A2C View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
MFG CO.
'NAND512R3A2C' PDF : 51 Pages View PDF
DC and AC parameters
10 DC and AC parameters
NAND512-A2C
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 16: Operating and AC measurement conditions. Designers should check that the
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 16.
Operating and AC measurement conditions
Parameter
NAND Flash
Min
Max
Supply Voltage (VDD)
1.8 V devices
3 V devices
Ambient Temperature (TA)
Load Capacitance (CL) (1 TTL GATE
and CL)
Grade 6
1.8 V devices
3 V devices
Input Pulses Voltages
1.8 V devices
3 V devices
Input and Output Timing Ref. Voltages
1.8 V devices
3 V devices
Input Rise and Fall Times
Output Circuit Resistors, Rref
Table 17. Capacitance(1)(2)
Symbol
Parameter
Test Condition
1.7
1.95
2.7
3.6
–40
85
30
50
0
VDD
0.4
2.4
0.9
1.5
5
8.35
Typ
Max
CIN Input Capacitance
VIN = 0 V
10
CI/O
Input/Output
Capacitance
VIL = 0 V
10
1. TA = 25 °C, f = 1 MHz. CIN and CI/O are not 100% tested.
2. Input/Output capacitances double on stacked devices.
Units
V
V
°C
pF
pF
V
V
V
V
ns
kΩ
Unit
pF
pF
34/51
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