NAND512W3A2C View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
MFG CO.
'NAND512W3A2C' PDF : 51 Pages View PDF
NAND512-A2C
DC and AC parameters
Table 18.
M
DC
characteristics,
1.8
V
devices(1)
Symbol
Parameter
Test Conditions
Min
Typ
IDD1
Sequential
Read
tRLRL minimum
E=VIL, IOUT = 0 mA
-
8
Operating Current
IDD2
Program
-
-
8
IDD3
Erase
-
-
8
IDD5
Stand-By Current (CMOS)
E=VDD-0.2,
WP=0/VDD
-
10
ILI
Input Leakage Current
VIN= 0 to VDDmax
-
-
ILO
Output Leakage Current
VOUT= 0 to VDDmax
-
-
VIH
Input High Voltage
-
VDD-0.4
-
VIL
Input Low Voltage
-
-0.3
-
VOH
Output High Voltage Level
IOH = -100 µA
VDD-0.1
-
VOL
Output Low Voltage Level
IOL = 100 µA
-
-
IOL (RB)
Output Low Current (RB)
VOL = 0.1 V
3
4
VLKO
VDD Supply Voltage (Erase and
Program lockout)
-
-
-
1. Leakage currents double on stacked devices.
Figure 16. Equivalent testing circuit for AC characteristics measurement
VDD
Max Unit
15
mA
15
mA
15
mA
50
µA
±10
µA
±10
µA
VDD+0.3 V
0.4
V
-
V
0.1
V
mA
1.1
V
NAND Flash
CL
GND
2Rref
2Rref
GND
Ai11085
35/51
Share Link: 
