NAND512W4A2C View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
MFG CO.
'NAND512W4A2C' PDF : 51 Pages View PDF
NAND512-A2C
DC and AC parameters
Table 21. AC Characteristics for operations
Symbol
Alt.
Symbol
Parameter
tALLRL1
tALLRL2
tBHRL
tBLBH1
tBLBH2
tBLBH3
tBLBH4
tAR
tRR
tPROG
tBERS
tRST
Address Latch Low to Read Electronic Signature
Read Enable Low
Read cycle
Ready/Busy High to Read Enable Low
Read Busy time
Program Busy time
Ready/Busy Low to
Ready/Busy High
Erase Busy time
Reset Busy time, during ready
Reset Busy time, during read
Reset Busy time, during program
Reset Busy time, during erase
tCLLRL
tDZRL
tEHQZ
tELQV
tRHRL
tCLR
tIR
tCHZ
tCEA
tREH
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to
Read Enable Low
Read Enable High Hold time
tRHQZ
tEHQX
tRHQX
tRLRH
tRHZ Read Enable High to Output Hi-Z
TOH Chip Enable high or Read Enable high to Output Hold
tRP
Read Enable Low to
Read Enable High
Read Enable Pulse Width
tRLRL
tRC
Read Enable Low to
Read Enable Low
Read Cycle time
tRLQV
tREA
Read Enable Low to Read Enable Access time
Output Valid
Read ES Access time(1)
tWHBH
tR
Write Enable High to
Ready/Busy High
Read Busy time
tWHBL
tWB Write Enable High to Ready/Busy Low
tWHRL tWHR Write Enable High to Read Enable Low
1. ES = Electronic Signature.
1.8V
devices
3V
devices
Unit
Min
10
Min
10
Min
20
Max 15
Max 500
Max
3
Max
5
Max
5
Max 10
Max 500
Min
10
Min
0
Max 30
Max 45
10
ns
10
ns
20
ns
12
µs
500 µs
3
ms
5
µs
5
µs
10
µs
500 µs
10
ns
0
ns
30
ns
35
ns
Min
15
10
ns
Max 30
30
ns
Min
10
10
ns
Min
25
Min
50
15
ns
30
ns
Max 30
18
ns
Max 15
Max 100
Min
60
12
µs
100 ns
60
ns
37/51
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