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Part Name
Description
NNCD10C View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
MFG CO.
NNCD10C
E.S.D NOISE CLIPPING DIODES
NEC => Renesas Technology
'NNCD10C' PDF : 8 Pages
View PDF
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NNCD3.3C to NNCD12C
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
Type Number
Breakdown Voltage
Note 1
V
BR
(V)
Dynamic
Impedance
Note 2
Zz (
Ω
)
Reverse Leakage
I
R
(
µ
A)
MIN. MAX. I
T
(mA) MAX. I
T
(mA) MAX. V
R
(V)
NNCD3.3C
3.10 3.50
5
130
5
NNCD3.6C
3.40 3.80
5
130
5
NNCD3.9C
3.70 4.10
5
130
5
NNCD4.3C
4.00 4.49
5
130
5
NNCD4.7C
4.40 4.92
5
130
5
NNCD5.1C
4.82 5.39
5
130
5
NNCD5.6C
5.29 5.94
5
80
5
NNCD6.2C
5.84 6.55
5
50
5
NNCD6.8C
6.44 7.17
5
30
5
NNCD7.5C
7.03 7.87
5
30
5
NNCD8.2C
7.73 8.67
5
30
5
NNCD9.1C
8.53 9.58
5
30
5
NNCD10C
9.42 10.58
5
30
5
NNCD11C
10.40 11.60
5
30
5
NNCD12C
11.38 12.64
5
35
5
20
1.0
10
1.0
10
1.0
10
1.0
10
1.0
5
1.5
5
2.5
5
3.0
2
3.5
2
4.0
2
5.0
2
6.0
2
7.0
2
8.0
2
9.0
Capacitance
C
t
(pF)
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
V
R
= 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330
Ω
(IEC1000
-4-2)
Notes 1.
Tested with pulse (40 ms)
2.
Zz is measured at I
T
give a small A.C. signal.
2
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