NNCD10F View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
MFG CO.
'NNCD10F' PDF : 8 Pages View PDF
NNCD3.3F to NNCD12F
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) (A-K1, A-K2)
Type Number
Breakdown VoltageNote 1
VBR (V)
Dynamic
ImpedanceNote 2
Zz (Ω)
Reverse Leakage
IR (µA)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V)
NNCD3.3F
3.10 3.50
5
130
5
NNCD3.6F
3.40 3.80
5
130
5
NNCD3.9F
3.70 4.10
5
130
5
NNCD4.3F
4.01 4.48
5
130
5
NNCD4.7F
4.42 4.90
5
130
5
NNCD5.1F
4.84 5.37
5
130
5
NNCD5.6F
5.31 5.92
5
80
5
NNCD6.2F
5.86 6.53
5
50
5
NNCD6.8F
6.47 7.14
5
30
5
NNCD7.5F
7.06 7.84
5
30
5
NNCD8.2F
7.76 8.64
5
30
5
NNCD9.1F
8.56 9.55
5
30
5
NNCD10F
9.45 10.55
5
30
5
NNCD11F
10.44 11.56
5
30
5
NNCD12F
11.42 12.60
5
35
5
20
1.0
10
1.0
10
1.0
10
1.0
10
1.0
5
1.5
5
2.5
2
3.0
2
3.5
2
4.0
2
5.0
2
6.0
2
7.0
2
8.0
2
9.0
Capacitance
Ct (pF)
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
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