NT1GD64S8HB0FM View Datasheet(PDF) - Nanya Technology

Part Name

Description

MFG CO.

NT1GD64S8HB0FM

1GB, 512MB and 256MB 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device

Nanya Technology 

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NT1GD64S8HA0FM / NT1GD64S8HB0FM

1GB : 128M x 64

PC2700 / PC2100 Unbuffered DDR SO-DIMM

Revision Log

Rev

Date

Modification

0.1

05/2003

Preliminary Release

0.2

05/2003

Updated Functional Block Diagram

0.3

11/2003

Updated format.

1.0 12/12/2003

Release

1.1 Dec 17,2003 Update to tables

1.2 Dec 19, 2003 IDD from device level

Nanya Technology Corporation

Hwa Ya Technology Park 669

Fu Hsing 3rd Rd., Kueishan,

Taoyuan, 333, Taiwan, R.O.C.

Tel: +886-3-328-1688

Please visit our home page for more information: www.nanya.com

Printed in Taiwan

©2003

REV 1.2

12/19/2003

Preliminary

14

© NANYA TECHNOLOGY CORPORATION

NANYA reserves the right to change products and specifications without notice.

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