NT5CC64M16DP-BE View Datasheet(PDF) - Nanya Technology
Part Name
Description
MFG CO.
'NT5CC64M16DP-BE' PDF : 138 Pages View PDF
NT5CB128M8DN/NT5CB64M16DP
NT5CC128M8DN/NT5CC64M16DP
1Gb DDR3 D-die SDRAM
DDR3/L SDRAM Command Description and Operation
Command Truth Table (Conti.)
NOTE1. All DDR3/L SDRAM commands are defined by states of , , , and CKE at the rising edge of the
clock. The MSB of BA, RA and CA are device density and configuration dependant.
NOTE2.
is Low enable command which will be used only for asynchronous reset so must be maintained HIGH
during any function.
NOTE3. Bank addresses (BA) determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode
Register.
NOTE4. “V” means “H or L (but a defined logic level)” and “X” means either “defined or undefined (like floating) logic level”.
NOTE5. Burst reads or writes cannot be terminated or interrupted and Fixed/on-the-Fly BL will be defined by MRS.
NOTE6. The Power-Down Mode does not perform any refresh operation.
NOTE7. The state of ODT does not affect the states described in this table. The ODT function is not available during Self
Refresh.
NOTE8. Self Refresh Exit is asynchronous.
NOTE9. VREF (Both VrefDQ and VrefCA) must be maintained during Self Refresh operation.
NOTE10. The No Operation command should be used in cases when the DDR3/L SDRAM is in an idle or wait state. The
purpose of the No Operation command (NOP) is to prevent the DDR3/L SDRAM from registering any unwanted
commands between operations. A No Operation command will not terminate a pervious operation that is still
executing, such as a burst read or write cycle.
NOTE11. The Deselect command performs the same function as No Operation command.
NOTE12. Refer to the CKE Truth Table for more detail with CKE transition.
REV 1.2
May. 2011
CONSUMER DRAM
© NANYA TECHNOLOGY CORP.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Share Link: 
