OPB706C View Datasheet(PDF) - TT Electronics.
Part Name
Description
MFG CO.
'OPB706C' PDF : 4 Pages View PDF
Input Diode (see OP165W for addi onal informa on)
VF Forward Voltage
IR Reverse Current
- - 1.7 V IF = 20 mA
- - 100 μA VR = 2 V
Output Phototransistor (see OP505W for addi onal informa on) | Photodarlington (see OP535 for addi onal informa on)
Collector-Emi er Brealdown Voltage
V(BR)CEO
OPB706
24 - -
OPB707
15 - -
V IC = 100 μA
V(BR)ECO Emi er-Collector Breakdown Voltage 5 - -
V IE = 100 μA
Collector Dark Current
ICEO
OPB706
OPB707
-
- 100 nA VCE = 5 V, IF = 0, EE ≤ 0.1 μW/cm2
- - 250
Combined
Crosstalk
ICX
OPB706
OPB707
-
- 200 nA IF = 20 mA, VCE = 5 V, No reflec ng surface(1)
- - 10 μA
On-State Collector Current
OPB706A
OPB706B
500 -
350 -
-
-
μA
IC(ON)
OPB706C 250 - -
IF = 20 mA, VCE = 5V , d = 0.05” (1.27 mm)(2) (3)
OPB707A
25 - -
OPB707B
17 - - mA
OPB707C
10 - -
Collector-Emi er Satura on Voltage
VCE(SAT)
OPB706
OPB707
0.4 - -
1.1 - -
IF = 20 mA, d = 0.05” (1.27 mm)(2) (3)
V
IC(ON) = 100μA
IC(ON) = 2 mA
Notes:
(1) Crosstalk (ICX) is the collector current measured with the indicated current in the input diode and with no reflec ng surface.
(2) The distance from the assembly face to the reflec ve surface is “d”.
(3) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflec ng surface. Reference:
Eastman Kodak, Catalog #E 152 7795.
(4) Lower curve is a calculated worst case condi on rather than the conven onal -2 Ω limit.
(5) All parameters tested using pulse techniques.
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