P22NF03L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'P22NF03L' PDF : 12 Pages View PDF
Electrical characteristics
2
Electrical characteristics
STP22NF03L
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS =0
30
V
VDS = max ratings
VDS = max ratings,
TC = 125 °C
1
µA
10
µA
VGS = ± 20 V
±100 nA
VDS = VGS, ID = 250 µA
1
V
VGS = 10 V, ID = 11 A
VGS = 5 V, ID = 11 A
0.038 0.05 Ω
0.045 0.06 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS= 15 V , ID = 11 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15 V, ID = 11 A
RG = 4.7 Ω VGS = 5 V
(see Figure 13)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 24 V, ID = 22 A,
VGS = 5 V
(see Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min.
Typ. Max. Unit
7
S
330
pF
90
pF
40
pF
13
ns
4
ns
12
ns
5
ns
6.5
9
nC
3.6
nC
2
nC
4/12
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