P2V28S20ATP-7 View Datasheet(PDF) - Vanguard International Semiconductor
Part Name
Description
MFG CO.
'P2V28S20ATP-7' PDF : 51 Pages View PDF
128Mb Synchronous DRAM
P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT)
P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT)
P2V28S40ATP-7,-75,-8 (4-BANK x 2,097,152-WORD x 16-BIT)
[Write with Auto-Precharge Interrupted by Write or Read to another Bank]
Burst write with auto-precharge can be interrupted by write or read to another bank. Next ACT command can be issued after
tRP. Auto-precharge interruption by a command to the same bank is inhibited.
Write Interrupted by WRITE to another bank (BL=4)
CLK
Command
Write
Write
BL
A0-9,11
Ya
Yb
tWR
A10
1
0
ACT
tRP
Xa
Xa
BA0-1
00
10
00
DQ
Da 0 Da 1 Db 0 Db 1 Db 2 Db 3
auto-precharge interrupted
activate
Write Interrupted by READ to another bank (CL=2,BL=4)
CLK
Command
Write
Read
BL
A0-9,11
Ya
Yb
tWR
A10
1
0
ACT
tRP
Xa
Xa
BA0-1
00
10
00
DQ
Da 0 Da 1
Qb0 Qb1 Qb2 Qb3
auto-precharge interrupted
activate
JULY.2000
Page-25
Rev.2.2
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