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Part Name
Description
P3C1256 View Datasheet(PDF) - Performance Semiconductor
Part Name
Description
MFG CO.
P3C1256
HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM
Performance Semiconductor
'P3C1256' PDF : 8 Pages
View PDF
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P3C1256
DATA RETENTION
Symbol
Parameter
Test Conditions
Min Max Unit
V
DR
I
(1)
CCDR
V
CC
for Data Retention
Data Retention Current
CE
≥
V
CC
-0.2V,
CE
2
≤
0.2V
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
V
DR
= 2.0V
2.0
3.6
V
600
µ
A
t
CDR
Chip Deselect to Data
See Retention Waveform
Retention Time
0
ns
t
R
Operating Recovery Time
t
(2)
RC
ns
1.
CE
1
≥
V
DR
-0.2V,
CE
2
≥
V
DR
-0.2V
or
CE
2
≤
0.2V;
or
CE
1
≤
0.2V,
CE
2
≤
0.2V;
V
IN
≥
V
DR
-0.2V
or
V
IN
≤
0.2V
2. t
RC
= Read Cycle Time
LOW V
CC
DATA RETENTION WAVEFORM (1) (
CE
1
CONTROLLED)
VCC
CE
4.5V
tCDR
2.2V
Data Retention Mode
VDR
CE
≥
VDR -0.2V
4.5V
tR
2.2V
LOW V DATA RETENTION WAVEFORM (2) (CE CONTROLLED)
CC
2
VCC
CE2
4.5V
tCDR
VIL
2.2V
Data Retention Mode
VDR
CE2
≤
0.2V
4.5V
tR
VIL
139
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