P4C1256-12CMBLF View Datasheet(PDF) - Semiconductor Corporation
Part Name
Description
MFG CO.
'P4C1256-12CMBLF' PDF : 17 Pages View PDF
P4C1256
DATA RETENTION CHARACTERISTICS (P4C1256L Military Temperature Only)
Symbol
Parameter
V
V for Data Retention
DR
CC
Test Conditons
Typ.*
Max
Min
V=
V=
Unit
CC
CC
2.0V 3.0V 2.0V 3.0V
2.0
V
I
Data Retention Current
CCDR
tCDR
Chip Deselect to
Data Retention Time
tR†
Operation Recovery Time
*TA = +25°C
§tRC = Read Cycle Time
† This parameter is guaranteed but not tested.
CE ≥ VCC –0.2V,
VIN ≥ VCC –0.2V
or VIN ≤ 0.2V
10
0
tRC§
15 100 200 µA
ns
ns
DATA RETENTION WAVEFORM
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
Commercial
ICC Dynamic Operating Current* Industrial
Military
–12 –15 –20 –25 –35 –45 –55 –70 Unit
170 160 155 150 145 N/A N/A N/A mA
N/A 170 165 160 155 150 N/A N/A mA
N/A N/A 170 165 160 155 150 150 mA
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
Document # SRAM119 REV G
Page 3 of 17
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