P4C1256L-70SNCLF View Datasheet(PDF) - Performance Semiconductor
Part Name
Description
MFG CO.
'P4C1256L-70SNCLF' PDF : 11 Pages View PDF
P4C1256L
CAPACITANCES(4)
(V = 5.0V, T = 25°C, F = 1.0 MHz)
CC
A
Symbol
Parameter
C
IN
Input Capacitance
COUT
Output Capacitance
Test Conditions
VIN = 0V
VOUT = 0V
Max
7
9
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
I
CC
Parameter
Dynamic Operating Current
Temperature
Range
Commercial
Industrial
*
-55
-70
70
70
85
85
**
-55
-70
15
15
25
25
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e. CE and WE ≤ VIL (max), OE is high. Switching
inputs are 0V and 3V.
**As above but @ f=1 MHz and VIL/ VIH = 0V/ VCC.
Unit
mA
mA
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
Symbol
Parameter
Min
Max
Min
Max
Unit
tRC
Read Cycle Time
55
70
ns
tAA Address Access Time
55
70
ns
t
Chip Enable Access
AC
55
Time
t
Output Hold from
OH
5
5
Address Change
tLZ
Chip Enable to
Output in Low Z
5
5
tHZ
Chip Disable to
Output in High Z
20
70
ns
ns
ns
25
ns
t
Output Enable Low
OE
to Data Valid
30
tOLZ Output Enable Low to
5
5
Low Z
tOHZ Output Enable High
20
to High Z
tPU
Chip Enable to Power
Up Time
0
0
35
ns
ns
25
ns
ns
tPD
Chip Disable to
Power Down Time
55
70
ns
Document # SRAM121 REV E
Page 3 of 11
Share Link: 
