P4C164L View Datasheet(PDF) - Performance Semiconductor
Part Name
Description
MFG CO.
'P4C164L' PDF : 8 Pages View PDF
P4C164/164L
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
Range
Commercial
ICC Dynamic Operating Current* Industrial
Military
–8 –10 –12 –15 –20 –25 –35
200 180 170 160 155 150 N/A
N/A 190 180 170 160 155 150
N/A N/A 180 170 160 155 150
*VCC = 5.5V.
Tested with outputs open.
f = Max.
Switching inputs are 0V and 3V.
CE
1
=
VIL,
CE2
=
VIH,
OE
=
VIH
–45 Unit
N/A mA
N/A mA
145 mA
DATA RETENTION CHARACTERISTICS (P4C164L, Military Temperature Only)
Symbol
Parameter
Test Condition
Min
VDR
ICCDR
tCDR
VCC for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
2.0
CE1 ≥ VCC – 0.2V or
CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V
or VIN ≤ 0.2V
0
tR†
Operation Recovery Time
tRC§
*T
A
=
+25°C
§tRC = Read Cycle Time
†This parameter is guaranteed but not tested.
Typ.*
V=
CC
2.0V 3.0V
10
15
Max
V=
CC
2.0V 3.0V
200 300
Unit
V
µA
ns
ns
DATA RETENTION WAVEFORM
VCC
CE1
CE2
DATA RETENTION MODE
t CDR
4.5V
VDR ≥ 2V
4.5V
tR
VHC
VDR
VHC
VLC
VLC
93
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