P4C164LL View Datasheet(PDF) - Semiconductor Corporation
Part Name
Description
MFG CO.
'P4C164LL' PDF : 10 Pages View PDF
P4C164LL - VERY LOW POWER 8K x 8 STATIC CMOS RAM
DATA RETENTION CHARACTERISTICS
Symbol
Parameter
Test Condition
Min Typ. * VCC =
Max VCC =
Unit
2.0V 3.0V 2.0V 3.0V
VDR VCC for Data Retention
2.0
V
ICCDR Data Retention Current
CE1 ≥ VCC - 0.2V or
1
2
3
4
µA
tCDR Chip Deselect to Data Retention Time CE2 ≤ 0.2V, VIN ≥ VCC - 0.2V or 0
ns
tR† Operation Recovery Time
VIN ≤ 0.2V
tRC§
ns
* TA = +25°C
§tRC = Read Cycle Time
† This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
ORDERING INFORMATION
Document # SRAM116 REV 04
Page 7
Share Link: 
