P4C198AL-45CI View Datasheet(PDF) - Performance Semiconductor
Part Name
Description
MFG CO.
'P4C198AL-45CI' PDF : 13 Pages View PDF
WRITE CYCLE NO. 2 (WE CONTROLLED)(13,14)
P4C198/198L, P4C198A/198AL
1520 08
WRITE CYCLE NO. 3 (CE(12) CONTROLLED)(13,14)
Notes:
13. CE (CE1, CE2 for P4C198A/L) and WE must be LOW for WRITE
cycle.
14. OE is LOW for this WRITE cycle.
15. If CE (CE1 or CE2 for P4C198A/L) goes HIGH simultaneously with WE
HIGH, the output remains in a high impedance state.
16. Write Cycle Time is measured from the last valid address to the first
transitioning address.
Document # SRAM113 REV A
Page 7 of 13
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