P4NK80Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'P4NK80Z' PDF : 18 Pages View PDF
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 20V
Gate threshold voltage
VDS = VGS, ID = 50µA
Static drain-source on
resistance
VGS = 10V, ID = 1.5 A
Min. Typ. Max. Unit
800
V
1
µA
50 µA
±10 µA
3
3.75 4.5
V
3
3.5
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 1.5A
2.9
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
575
67
13
pF
pF
pF
Cosseq(2).
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
60
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=400 V, ID= 1.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
13
ns
12
ns
35
ns
32
ns
tr(Voff)
tr
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=640 V, ID= 3 A,
RG=4.7Ω, VGS=10V
(see Figure 16)
18
ns
7.5
ns
25
ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=640V, ID = 3 A
VGS =10V
(see Figure 19)
22.5
nC
4.2
nC
11.3
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/18
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