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P80NF10FP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
'P80NF10FP' PDF : 9 Pages View PDF
1 2 3 4 5 6 7 8 9
STP80NF10FP
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID(1)
ID(1)
IDM(2)
PTOT
dv/dt (3)
EAS(4)
VISO
Tstg
Tj
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Insulation withstand voltage (DC)
Storage temperature
Operating junction temperature
1. Limited by Package
2. Pulse width limited by safe operating area
3. ISD <80A, di/dt < 300A/µs, VDD=80% V(BR)DSS
4. Starting Tj = 25°C, ID = 80A, VDD = 50V
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
Tl
Maximum lead temperature for soldering purpose
Electrical ratings
Value
100
±20
38
27
152
45
0.3
9
350
2500
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C
Value
3.33
62.5
300
Unit
°C/W
°C/W
°C
3/12
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