P80NF10FP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
P80NF10FP
STMicroelectronics
'P80NF10FP' PDF : 12 Pages View PDF
Electrical characteristics
2
Electrical characteristics
STP80NF10FP
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test condictions
Min. Typ. Max. Unit
ID = 250µA, VGS = 0
100
V
VDS = Max rating
VDS = Max rating @125°C
1 µA
10 µA
VGS = ±20V
±100 nA
VDS = VGS, ID = 250µA
VGS = 10V, ID = 40A
2
3
4
V
0.012 0.015 Ω
Table 4. Dynamic
Symbol
Parameter
Test condictions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V , ID =40 A
VDS = 25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 80V, ID = 80A,
VGS = 10V
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Min.
Typ.
80
Max. Unit
S
4300
pF
600
pF
230
pF
140 189 nC
23
nC
51
nC
4/12
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