PA50 View Datasheet(PDF) - Cirrus Logic
Part Name
Description
MFG CO.
'PA50' PDF : 4 Pages View PDF
PA50 • PA50A
Product Innova tionFrom
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +VS to –VS
BOOST VOLTAGE, +Vb to -Vb
OUTPUT CURRENT, within SOA
100V
130V
100A
POWER DISSIPATION, internal
400W
INPUT VOLTAGE, differential
±20V
INPUT VOLTAGE, common mode
TEMPERATURE, pin solder - 10s
±Vb
300°C
TEMPERATURE, junction2
150°C
TEMPERATURE, storage
–65 to +150°C
OPERATING TEMPERATURE RANGE, case
–55 to +125°C
SPECIFICATIONS
PA50
PA50A
PARAMETER
TEST CONDITIONS1
MIN
TYP MAX MIN
TYP MAX
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
OFFSET VOLTAGE, vs. supply
BIAS CURRENT, initial
BIAS CURRENT vs. supply
OFFSET CURRENT, initial
INPUT IMPEDANCE, DC
IMPUT CAPACITANCE
COMMON MODE VOLTAGE RANGE
Full temperature range
Full temperature range
COMMON MODE REJECTION,DC
INPUT NOISE
Full temp, range, VCM= ±20V
100KHZ BW, Rs=1KΩ
5
20
10
10
.01
10
10"
13
-VB +12
+VB -14
90
100
10
10
50
30
50
50
2
5
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
GAIN
OPEN LOOP,@ 15Hz
GAIN BANDWIDTH PRODUCT
POWER BANDWIDTH
Full temperature range
RL=10Ω
RL=4Ω, Vo=80VP-P, Av=-10
Full temperature range
94
102
*
*
3
*
200
*
OUTPUT
VOLTAGE SWING
VOLTAGE SWING, PA50
VOLTAGE SWING, PA50A
CURRENT, peak
SETTLING TIME TO.1%
SLEW RATE
RESISTANCE
POWER SUPPLY
VOLTAGE, ±VBOOST
VOLTAGE, ±VS
CURRENT,quiescent, boost supply
CURRENT, quiescent, total
Io=40A
±VBOOST=±VS±10V, Io=40A
±VBOOST=±VS±10V, Io=50A
3ms 10% Duty Cycle
AV= -10,10V STEP,RL=4Ω
AV=-10
IO=0, NO LOAD, 2MHZ
Full temperature range
Full temperature range
±VS 9.5 ±VS 8.0
±VS 5.8 ±VS 4.0
100
1
50
2.5
*
*
±VS 5.8 ±VS 5.0
*
*
*
*
+14, -12 ±15 ±65
*
*
*
±3
±50
*
*
26
32
*
*
30
36
*
*
THERMAL
RESISTANCE,AC,junction to case3
RESISTANCE,DC,junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
Full temperature range, F>60HZ
Full temperature range, F>60HZ
Full temperature range
Meets full range specification
-25
.2
.25
*
*
.25
.31
*
*
12
*
85
*
*
UNITS
mV
µV/°V
µV/V
pA
pA/V
pA
Ω
pF
V
dB
µVrms
dB
MHz
kHz
V
V
V
A
µs
V/µs
Ω
V
V
mA
mA
°C/W
°C/W
°C/W
°C
NOTES: * The specification of PA50A is identical to the specification for PA50 in applicable column to the left
1. Unless otherwise noted: TC = 25°C, DC input specifications are ± value given. Power supply voltage is typical rating.
±VBOOST = ±VS.
2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF. For guidance, refer to the heatsink data sheet.
3. Rating applies if the output current alternates between both output transistors at a rate faster than 60 Hz.
CAUTION
The PA50 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
2
PA50U
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