PA89 • PA89A
Product Innova tionFrom
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PARAMETER
SUPPLY VOLTAGE, +VS to –VS
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal at TC = 25°C
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, pin solder - 10s max
TEMPERATURE, junction2
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
1200V
100mA
40W
±25V
±VS 25V
300°C
150°C
–65 to 125°C
–55 to 125°C
TEST CONDITIONS 1
PA89
PA89A
MIN TYP MAX MIN TYP MAX
UNITS
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
OFFSET VOLTAGE, vs. supply
OFFSET VOLTAGE, vs. time
BIAS CURRENT, initial3
BIAS CURRENT,vs. supply
OFFSET CURRENT, initial3
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
COMMON MODE VOLTAGE RANGE4
COMMON MODE REJECTION, DC
INPUT NOISE
.5
Full temperature range
10
7
75
5
.01
5
105
4
Full temperature range
±VS 50
Full temperature range, VCM = ±90V 96
110
10kHz BW, RS = 10K, CC = 15pF
4
2
.25
.5
30
5
10
*
*
50
3
10
*
50
3
20
*
*
*
*
*
mV
µV/°C
µV/V
µV/kh
pA
pA/V
pA
MΩ
pF
V
dB
µV RMS
GAIN
OPEN LOOP GAIN at 10Hz
GAIN BANDWIDTH PRODUCT
POWER BANDWIDTH
PHASE MARGIN
RL = 10k, CC = 15pF
108 120
RL = 10k, CC = 15pF, AV = 100
10
RL = 10k, CC = 15pF, VO = 500V p-p
5
Full temperature range, AV = 10
60
*
*
*
*
*
dB
MHz
kHz
°
OUTPUT
VOLTAGE SWING4
VOLTAGE SWING4
CURRENT, continuous
SLEW RATE
CAPACITIVE LOAD, Av = 10
CAPACITIVE LOAD, Av>10
SETTLING TIME to .1%
IO = 75mA
Full temperature range, IO = 20mA
Full temperature range
CC = 15pF, AV = 100
Full temperature range
Full temperature range
RL = 10KΩ, 10V step, Av = 10
±VS 45 ±VS 30
±VS 20 ±VS 12
75
12
16
2
*
*
*
*
*
*
*
1
*
SOA
*
*
V
V
mA
V/µs
nF
µs
POWER SUPPLY
VOLTAGE, VS4
CURRENT, quiescent
Full temperature range
±75 ±500 ±600 *
*
4.8 6.0
*
*
V
*
mA
THERMAL
RESISTANCE, AC, junction to case5
RESISTANCE, DC, junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
Full temperature range, F > 60Hz
Full temperature range, F < 60Hz
Full temperature range
Meets full range specifications
2.1 2.3
*
*
3.3 3.5
*
*
15
*
–25
+85
*
*
°C/W
°C/W
°C/W
°C
NOTES: * The specification of PA89A is identical to the specification for PA89 in applicable column to the left.
1. Unless otherwise noted: TC = 25°C, CC = 68pF, RC = 220Ω, and VS = ±500V. Input parameters for bias currents and offset volt-
age are ± values given.
2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF.
3. Doubles for every 10°C of temperature increase.
4. +VS and –VS denote the positive and negative supply rail respectively.
5. Rating applies only if the output current alternates between both output transistors at a rate faster than 60Hz.
CAUTION
The PA89 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
2
PA89U