Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

PC3H510NIP0F View Datasheet(PDF) - Sharp Electronics

Part Name
Description
MFG CO.
'PC3H510NIP0F' PDF : 12 Pages View PDF
1 2 3 4 5 6 7 8 9 10 Next
Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol Rating
Unit
Forward current
IF
*1 Peak forward current IFM
10
mA
200
mA
Reverse voltage
VR
6
V
Power dissipation
P
15
mW
Collector-emitter voltage VCEO
35
V
Emitter-collector voltage VECO
6
V
Collector current
IC
80
mA
Collector power dissipation PC
150
mW
Total power dissipation Ptot
170
mW
Operating temperature
Topr 30 to +100 ˚C
Storage temperature
Tstg 40 to +125 ˚C
*2 Isolation voltage
Viso (rms)
2.5
kV
*3 Soldering temperature
Tsol
260
˚C
*1 Pulse width100µs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
Electro-optical Characteristics
Parameter
Forward voltage
Input Reverse current
Terminal capacitance
Collector dark current
Output Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Current transfer ratio
Collector-emitter saturation voltage
Transfer Isolation resistance
charac-
teristics Floating capacitance
Rise time
Response time
Fall time
Symbol
VF
IR
Ct
ICEO
BVCEO
BVECO
IC
VCE (sat)
RISO
Cf
tr
tf
Conditions
IF=5mA
VR=4V
V=0, f=1kHz
VCE=10V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
IF=0.5mA, VCE=2V
IF=1mA, IC=2mA
DC500V, 40 to 60%RH
V=0, f=1MHz
VCE=2V, IC=10mA, RL=100
PC3H510NIP0F
MIN.
35
6
3
5×1010
TYP.
1.2
30
14
1×1011
0.6
60
53
MAX.
1.4
10
250
1000
60
1.0
1.0
300
250
(Ta=25˚C)
Unit
V
µA
pF
nA
V
V
mA
V
pF
µs
µs
Sheet No.: D2-A02302EN
4
Share Link: GO URL

All Rights Reserved © qdatasheet.com  [ Privacy Policy ] [ Contact Us ]