PD55035-E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

PD55035-E

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

STMicroelectronics 

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PD55035-E, PD55035S-E

Typical performance 175MHz

Figure 19. 175MHz test circuit schematic (engineering)

+VGG

+VDD

RF

Input

RF

Output

Table 7. 175MHz test circuit component part list

Component

Description

C1,C6

10 µF ELECTROLYTIC CAPACITOR

C2,C5

0.1 µF CHIP CAPACITOR

C3, C4

0.01 µF CHIP CAPACITOR

C7, C8

1200 pF CHIP CAPACITOR

C9, C16 1000 pF CHIP CAPACITOR

C10

ARCO 406 TRIMMER CAPACITOR

C11

62 pF CHIP CAPACITOR

C12

15 pF CHIP CAPACITOR

C13

20 pF CHIP CAPACITOR

C14

75 pF CHIP CAPACITOR

C15

JOHANSON 1-20 pF TRIMMER CAPACITOR

R1

33 kΩ CHIP RESISTOR

R2

18 Ω CHIP RESISTOR

R3

27 Ω CHIP RESISTOR

R4

47 Ω CHIP RESISTOR

L1

5 TURN, 16 AWG MAGNETWIRE, ID = 0.25”, INDUCTOR

FB1, FB2

BOARD

FERRITE BEAD

ROGER, ULTRA LAM 2000 THK 0.030”, ε r = 2.55 2oz. ED Cu 2 SIDES.

11/22

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