PDM41258LA12SOATY View Datasheet(PDF) - Paradigm Technology
Part Name
Description
MFG CO.
'PDM41258LA12SOATY' PDF : 8 Pages View PDF
PDM41258
Low VCC Data Retention Waveform
1
Data Retention Mode
V CC
VIH
CE VIL
t CDR
4.5V
VDR
4.5V
tR
2
VDR
3
DON'T CARE
4
5
Data Retention Electrical Characteristics (LA Version Only)
6
Symbol Parameter
Test Conditions
Min. Typ. Max. Unit
VDR
ICCDR
VCC for Retention Data
Data Retention Current
tCDR
tR(4)
Chip Deselect to Data Retention Time
Operation Recovery Time
CE ≥ VCC – 0.2V
VIN ≥ VCC – 0.2V
or ≤ 0.2V
2
VCC = 2V
—
—
95
—
V
500 µA
7
VCC = 3V
—
350 750 µA
0
tRC
—
—
—
—
ns
ns
8
NOTES: (For three previous Electrical Characteristics tables)
1. The device is continuously selected. Chip Enable is held in its active state.
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, tHZCE is less than tLZCE.
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4. This parameter is sampled.
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage.
6. VCC = 5V ± 5%.
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11
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Rev. 2.2 - 4/27/98
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