PH955L View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PH955L' PDF : 12 Pages View PDF
Philips Semiconductors
PH955L
N-channel TrenchMOS™ logic level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
PH955L
LFPAK
plastic single-ended surface mounted package; 4 leads
4. Limiting values
Version
SOT669
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V; Figure 2 and Figure 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
-
55
V
-
55
V
-
±20
V
-
62.5 A
-
43.7 A
-
187
A
-
62.5 W
−55 +150 °C
−55 +150 °C
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
-
52
A
-
156
A
EDS(AL)S non-repetitive drain-source
avalanche energy
EDS(AL)R repetitive drain-source avalanche
energy
unclamped inductive load; ID = 44 A;
tp = 0.1 ms; VDD ≤ 55 V; RGS = 50 Ω;
VGS = 5 V; starting at Tj = 25 °C
unclamped inductive load; ID = 4.4 A;
tp = 0.1 ms; VDD ≤ 55 V; RGS = 50 Ω;
VGS = 5 V
-
195
mJ
[1] -
2
mJ
[2]
[1] Duty cycle is limited by the maximum junction temperature.
[2] Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
9397 750 14557
Product data sheet
Rev. 01 — 1 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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