PH955L View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PH955L' PDF : 12 Pages View PDF
Philips Semiconductors
PH955L
N-channel TrenchMOS™ logic level FET
2.5
VGS(th)
(V)
2
1.5
1
03aa33
max
typ
min
10-1
ID
(A)
10-2
10-3
10-4
03aa36
min
typ
max
0.5
10-5
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
10
VGS
(V)
8
6
003aaa784
VDD = 12 V
44 V
4
2
0
0
20
40
60 QG (nC) 80
ID = 25 A; VDD = 12 V and 44 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
VDS
ID
Vplat
VGS(th)
VGS
Qgs1 Qgs2
Qgs
Qgd
Qg(tot)
003aaa508
Fig 12. Gate charge waveform definitions
9397 750 14557
Product data sheet
Rev. 01 — 1 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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