Philips Semiconductors
PH955L
N-channel TrenchMOS™ logic level FET
40
IS
(A)
30
20
003aaa781
150 °C
Tj = 25 °C
104
C
(pF)
103
003aaa783
Ciss
Coss
10
Crss
0
0.2
0.4
0.6
0.8
1
VSD (V)
102
10-1
1
10
102
VDS (V)
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
VGS = 0 V; f = 1 MHz
Fig 14. Input, output and reverse transfer capacitances
as a function of dr ain-source voltage; typical
values
9397 750 14557
Product data sheet
Rev. 01 — 1 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
8 of 12