PHP10N10E View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHP10N10E' PDF : 7 Pages View PDF
Philips Semiconductors
PowerMOS transistor
Product Specification
PHP10N10E
VGS / V
12
10
8
BUK452-100
VDS / V =20
80
6
4
2
0
0
2
4
6
8
10
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 11 A; parameter VDS
IF / A
BUK452-100A
20
10
Tj / C = 150
25
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 11 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
September 1997
5
Rev 1.000
Share Link: 
