PHP11N06LT View Datasheet(PDF) - Philips Electronics

Part Name

Description

MFG CO.

PHP11N06LT

55 V, N-channel trenchMOS transistor logic level FET

Philips Electronics 

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Philips Semiconductors

N-channel TrenchMOS™ transistor

Logic level FET

Product specification

PHP11N06LT, PHB11N06LT

PHD11N06LT

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current

(body diode)

ISM

Pulsed source current (body

diode)

VSD

Diode forward voltage

IF = 10 A; VGS = 0 V

trr

Reverse recovery time

IF = 10 A; -dIF/dt = 100 A/µs;

Qrr

Reverse recovery charge VGS = 0 V; VR = 30 V

MIN. TYP. MAX. UNIT

-

- 10.3 A

-

- 41 A

- 1.15 1.5 V

- 35 - ns

- 55 - nC

August 1999

3

Rev 1.000

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