PHP18NQ10T View Datasheet(PDF) - Philips Electronics

Part Name

Description

MFG CO.

PHP18NQ10T

N-channel TrenchMOS™ transistor

Philips Electronics 

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Philips Semiconductors

N-channel TrenchMOS™ transistor

Product specification

PHP18NQ10T, PHB18NQ10T

PHD18NQ10T

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current

(body diode)

ISM

Pulsed source current (body

diode)

VSD

Diode forward voltage

IF = 18 A; VGS = 0 V

trr

Reverse recovery time

IF = 18 A; -dIF/dt = 100 A/µs;

Qrr

Reverse recovery charge VGS = 0 V; VR = 25 V

MIN. TYP. MAX. UNIT

-

- 18 A

-

- 72 A

- 0.92 1.2 V

- 55 - ns

- 135 - nC

August 1999

3

Rev 1.000

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