PHP24N03T View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHP24N03T' PDF : 7 Pages View PDF
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
PHP24N03T
ID, Drain current (Amps)
20 10 V
20 V
15
PHP24N03T
6.5 V
Tj = 25 C
6V
5.5 V
10
5V
5
4.5 V
VGS = 4 V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
RDS(on), Drain-Source on resistance (Ohms) PHP24N03T
0.2
VGS = 4 V
4.5 V
5V
5.5 V
0.15
0.1
Tj = 25 C
0.05
10 V
20 V
0
0
5
10
15
20
ID, Drain current (Amps)
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Drain current, ID (A)
15
VDS = 30 V
PHP24N03T
10
5
175 C
Tj = 25 C
0
0
2
4
6
8
10
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
10 Transconductance, gfs (S)
VDS = 30 V
8
6
4
PHP24N03T
Tj = 25 C
175 C
2
0
0
5
10
15
20
Drain current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
a
2
30V TrenchMOS
1.5
1
0.5
0
-100
-50
0
50
100
150
200
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 12 A; VGS = 10 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
-0100
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
September 1997
4
Rev 1.100
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