PHP36N06E View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHP36N06E' PDF : 7 Pages View PDF
Philips Semiconductors
PowerMOS transistor
Product specification
PHP36N06E
VGS / V
12
10
8
VDS / V = 12
BUK474-60H
48
6
4
2
0
0
10
20
30
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 41 A; parameter VDS
IF / A
80
Tj / C =
70
-40
25
150
60
BUK474-60H
50
40
30
20
10
0
0
0.5
1
1.5
2
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80 100 120 140
Tmb / C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 41 A
VGS
0
RGS
L
VDS
T.U.T.
+ VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS/(BVDSS − VDD)
August 1996
5
Rev 1.000
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