PHP50N06 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHP50N06' PDF : 7 Pages View PDF
Philips Semiconductors
PowerMOS transistor
Product specification
PHP50N06
VGS / V
12
10
8
BUK456-50
VDS / V =10
40
6
4
2
0
0
20
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 52 A; parameter VDS
IF / A
100
BUK456-50A
50
150 C
25 C
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
August 1996
5
Rev 1.000
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