Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
120
Pder
(%)
80
03aa16
120
I der
(%)
80
03aa24
40
40
0
0
50
100
150
200
Tmb (oC)
Pder
=
-------P----t--o---t-------
P
×
100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
102
RDSon = VDS / ID
0
0
50
100
150
200
Tmb (oC)
Ider
=
--------I--D---------
I
×
100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03aaa175
tp = 10 µs
100 µs
10
1 ms
DC
10 ms
100 ms
1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08916
Product data
Rev. 01 — 14 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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