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PHP87N03T View Datasheet(PDF) - Philips Electronics

Part Name
Description
MFG CO.
PHP87N03T
Philips
Philips Electronics Philips
'PHP87N03T' PDF : 8 Pages View PDF
1 2 3 4 5 6 7 8
Philips Semiconductors
TrenchMOStransistor
Standard level FET
Product specification
PHP87N03T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 75 A; VGS = 0 V
trr
Reverse recovery time
IF = 75 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
-
75
A
-
- 240 A
- 0.95 1.2 V
-
1.0
-
V
-
95
-
ns
- 0.15 -
µC
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 45 A; VDD 15 V;
VGS = 10 V; RGS = 50 ; Tmb = 25 ˚C
MIN.
-
TYP.
-
MAX. UNIT
200 mJ
September 1997
3
Rev 1.100
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