PIC16C55X
10.1 DC Characteristics: PIC16C55X-04 (Commercial, Industrial, Extended)
PIC16C55X-20 (Commercial, Industrial, Extended)
HCS1365-04 (Commercial, Industrial, Extended)
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40C TA +85C for industrial and
0C TA +70C for commercial and
-40C TA +125C for extended
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D020
IPD Power-Down Current(3)
16LC55X — 0.7 2 A VDD = 3.0V, WDT disabled
IWDT WDT Current(5)
16C55X —
1.0 2.5 A VDD = 4.0V, WDT disabled
15 A (+85C to +125C)
16LC55X — 6.0 15 A VDD = 3.0V
16C55X —
6.0 20 A VDD = 4.0V
(+85C to +125C)
* These parameters are characterized but not tested.
† Data is “Typ” column is at 5V, 25C,unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all IDD measurements in active Operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins configured as input, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins configured as input and tied to VDD or VSS.
4: For RC osc configuration, current through REXT is not included. The current through the resistor can be esti-
mated by the formula Ir = VDD/2REXT (mA) with REXT in k
5: The current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.
1996-2013 Microchip Technology Inc.
Preliminary
DS40143E-page 77