PSB125/08 View Datasheet(PDF) - Powersem GmbH
Part Name
Description
MFG CO.
'PSB125/08' PDF : 2 Pages View PDF
1
2
PSB 125
200
A
160
T=150°C
120
80
40
T=25°C
IF
0
VF 1
1.5 V
Fig. 1 Forward current versus
voltage drop per diode
I-I-FF-S(-MO-V-)
1.6
IFSM (A)
TVJ=45°C TVJ=150°C
1800
1600
5
10
A2s
1.4
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
4
10
TVJ=45°C
TVJ=150°C
3
10
1
2
46
10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
300
[W] PSB 125
250
200
150
100
50
PVTOT
0
50
IFAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
100 0
[A]
80
TC
85
0.19 0.11 = RTHCA [K/W]
90
0.28
95
100
105
0.44
110
115
120
0.77
125
130
1.77
135
140
50
Tamb
100
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
1.5
K/W
1
Z thJK
Z thJC
150
DC
[A]
sin.180°
rec.120°
rec.60°
100
rec.30°
50
IdAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
0.5
Zth
0.01
0.1 t[s] 1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Share Link: 
