PSD 125
200
A
160
T=150°C
120
I-I-FF-S(-MO-V-)
1.6
1.4
1.2
IFSM (A)
TVJ=45°C TVJ=150°C
1800
1600
80
40
T=25°C
IF
0
VF 1
1.5 V
Fig. 1 Forward current versus
voltage drop per diode
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
600
[W] PSD 125
500
400
300
200
100
PVTOT
0
25 75
IFAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
125 175 0
[A]
0.07 0.03
0.11
0.2
0.36
0.86
50
Tamb
65
TC
70
= RTHCA [K/W] 75
80
85
90
95
100
105
110
115
120
125
130
135
140
100
145
°C
150
150
[K]
5
10
A2s
4
10
TVJ=45°C
TVJ=150°C
3
10
1
2
46
10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
200
[A]
150
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
IdAV
0
50
100 150 200
TC(°C)
Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current
temperature
at case temperature
K/W
1.2
1
0.8
0.6
0.4
0.2
Z th
Z thJK
Z thJC
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions