PSD75 View Datasheet(PDF) - Powersem GmbH
Part Name
Description
MFG CO.
'PSD75' PDF : 2 Pages View PDF
1
2
PSD 75
200
A
160
120
T=150°C
I-I-FF-S(-MO-V-)
1.6
1.4
1.2
IFSM (A)
TVJ=45°C TVJ=150°C
1000
850
10 4
2
As
TVJ=45°C
80
40
IF
0
VF 1
T=25°C
1.5 V
Fig. 1 Forward current versus
voltage drop per diode
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
TVJ=150°C
3
10
1
2
4 6 10
t [ms]
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
300
[W] PSD 75
250
85
TC
90
0.2 0.12 = RTHCA [K/W]
95
0.29
100
200
105
0.45
110
150
100
50
PVTOT
0
25
IFAVM
0.79
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.79
75
0
50
[A] Tamb
115
120
125
130
135
140
100
145
°C
150
150
[K]
Fig. 4 Power dissipation versus direct output current and ambient
temperature
100
[A]
80
60
DC
sin.180°
rec.120°
rec.60°
rec.30°
40
20
IdAV
0
50 100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
2
K/W
1.5
1
Z thJK
Z thJC
0.5
Z th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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