200
[A]
150
100
50
Tvj = 150°C
IF
Tvj = 25°C
0
0.5 1 1.5 2
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per
diode IFSM: Crest value. t: duration
Fig. 3 ∫i2dt versus time (1-10ms)
per diode (or thyristor)
Fig. 4 Power dissipation versus direct output
current and ambient temperature
2
K/W
1.5
1
Z thJK
Z thJC
Fig.5 Maximum forward current at
case temperature
0.5
Zth
0.01
0.1 t[s] 1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20