PT4850F View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'PT4850F' PDF : 6 Pages View PDF
PT4800/PT4800F/PT4810/PT4810F/PT4850F
s Electro-optical Characteristics
( Ta = 25˚C)
Parameter
PT4800
PT4800F
*2Collector current
PT4850F
PT4810
PT4810F
PT4800/PT4800F
Collector dark current
PT4850F
PT4810/PT4810F
PT4800/PT4800F
*2Collector-emitter saturation
voltage
PT4850F
PT4810/PT4810F
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Peak sensitivity
wavelength
Response
time
Rise time
Fall time
PT4800
PT4800F
PT4850F
PT4810
PT4810F
PT4800/PT4800F
PT4850F
PT4810/PT4810F
PT4800/PT4800F
PT4850F
PT4810/PT4810F
Half intensity angle
Symbol
Conditions
Ee = 1mW/cm2
VCE = 5V
IC
Ee = 0.1mW/cm2
VCE = 2V
I CEO
V CE
( sat )
BV CEO
BV ECO
Ee = 0, VCE = 20V
Ee = 0, VCE = 10V
Ee = 10mW/cm2
IC = 0.5mA
Ee = 1mW/cm2
IC = 2.5mA
IC = 0.1mA
Ee = 0
IE = 0.01mA
Ee = 0
λp
-
VCE = 2V, I C = 2mA
RL = 100Ω
t r VCE = 2V
IC = 10mA
RL = 100Ω
VCE = 2V, I C = 2mA
RL = 100Ω
tf V CE = 2V
IC = 10mA
RL = 100Ω
∆θ
-
MIN. TYP. MAX. Unit
0.12 0.4
1.0
mA
0.08 0.25 0.75 mA
0.12
-
0.56 mA
0.45
-
7.0
mA
0.27
-
6.0
mA
-
-
0.1
mA
-
-
1.0
mA
-
-
0.4
V
-
-
1.0
V
35
-
-
V
6
-
-
V
-
800
-
nm
-
860
-
nm
-
860
-
nm
-
800
-
nm
-
860
-
nm
-
3.0
-
µs
-
80
400
µs
-
3.5
-
µs
-
70
350
µs
-
± 35
-
˚
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Fig. 2-a Collector Dark Current vs.
Ambient Temperature
(PT4800/PT4800F/PT4850F )
10 - 6
5 VCE = 20V
100
2
10 - 7
80
5
2
60
10 - 8
5
40
2
10 - 9
20
5
0
- 25
0
25
50
75 85 100
Ambient temperature T a (˚C)
2
10 - 10
0
25
50
75
100
Ambient temperature T a (˚C)
Share Link: 
