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PT501C View Datasheet(PDF) - Sharp Electronics

Part Name
Description
MFG CO.
'PT501C' PDF : 4 Pages View PDF
1 2 3 4
PT501/PT510
PT501/PT510
TO-18 Type Narrow
Acceptance Phototransistor
s Features
1. Narrow acceptance (∆θ : TYP. ± 6˚ )
2. TO -18 type standard package
3. With base terminal : PT510
s Outline Dimensions
φ 4.7±0.1 Glass
lens
PT501
( Unit : mm )
φ 4.7± 0.1 Glass
lens
PT510
s Applications
1. Optoelectronic switches, optoelectronic
counters
2. Smoke detectors
3. Infrared applied systems
φ 0.45
2.5
1.0
1.0
45˚
21
φ 5.7MAX.
1
2.5
1.0
3
φ 0.45
2 φ 2.5
1.0
1
45˚
φ 5.7MAX.
1
s Absolute Maximum Ratings
1 Collector
2 Emitter
2
( Ta = 25˚C)
1 Collector(Case)
2
2 Base
3 3 Emitter
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-base voltage
Emitter-base voltage
Collector power dissipation
Operating temperature
Storage temperature
*1 Soldering temperature
Symbol
PT501
PT510
Unit
V CEO
45
35
V
V ECO
6
6
V
V CBO
-
35
V
V EBO
-
6
V
PC
75
75
mW
T opr
- 25 to + 125 - 25 to + 125
˚C
T stg
- 55 to + 150 - 55 to + 150
˚C
T sol
260
260
˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
s Electro-optical Characteristics
( Ta = 25˚C)
Parameter
*2Collector current
Collector dark current
*2Collector-emitter saturation voltage
Peak sensitivity wavelength
Response
time
Rise time
Fall time
Symbol
Conditions
IC VCE = 5V, E e= 10mW/cm2
I CEO
VCE (sat)
λP
VCE = 30V, Ee = 0
IC = 1mA, E e = 10mW/cm2
tr
VCE = 2V, I C = 2mA,
RL = 100( PT501 : 1k )
tf
MIN.
2.5
-
-
-
-
-
TYP.
PT501 10
PT510 20
2 x 10 - 9
0.2
800
PT501 10
PT510
2
PT501 10
PT510
3
MAX. Unit
-
mA
10- 7
A
-
V
-
nm
-
µs
-
µs
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
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