PT550/PT550F
PT550/PT550F
TO-18 Type Phototransistor
with Base Terminal
s Features
1. High sensitivity
( PT550 IC : MIN.3mA at E e = 0.1mW/cm2
PT550F IC : MIN.3mA at E e = 1mW/cm 2
2. Narrow acceptance : PT550
(∆ θ : TYP. ± 6˚ )
Wide acceptance : PT550F
(∆ θ : TYP. ± 50˚ )
3. TO - 18 type standard package
s Outline Dimensions
φ 4.7± 0.1
PT550
( Unit : mm)
φ4.7± 0.1
φ 3.0 ± 0.1
PT550F
φ 0.45
φ 0.45
1
2.5
2.5
s Applications
1. Optoelectronic switches, optoelectronic
counters
2. Smoke detectors
3. Infrared applied systems
1.0
3
2 φ 2.5
1.0
3
2 φ 2.5
23
1.0
1
1.0
1
45 ˚
φ 5.7MAX.
45 ˚
φ 5.7 MAX.
1 Collector ( Case ) 2 Base 3 Emitter
s Absolute Maximum Ratings
( Ta = 25˚C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-base voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1 Soldering temperature
Symbol
Rating
Unit
V CEO
35
V
V ECO
6
V
V CBO
35
V
IC
100
mA
PC
150
mW
T opr
- 25 to + 125
˚C
T stg
- 55 to + 150
˚C
T sol
260
˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
s Electro-optical Characteristics
Parameter
*2Collector current
Collector dark current
Collecter-emitter saturation
voltage
Peak sensitivity wavelength
Response
Rise time
time
Fall time
Symbol
Conditions
PT550
PT550F
IC
VCE = 5V
VCE = 5V
Ee = 0.1mW/cm2 Ee = 1mW/cm2
ICEO VCE = 10V, E e = 0, I B = 0
VCE ( sat )
λP
IC = 1mA, I B= 0
Ee = 0.1mW/cm2
IC = 1mA, I B = 0
Ee = 1mW/cm2
-
tr
VCC = 15V, IC = 1mA, R L = 1kΩ
tf
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp )
MIN.
3
-
-
-
-
-
( Ta = 25˚C)
TYP.
MAX.
Unit
20
PT550 142
PT550F 150
mA
10- 7
10 -6
A
-
1.0
V
800
-
nm
350
-
µs
300
-
µs
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data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”