Version 1.3
Maximum Ratings (TA = 25 °C)
Parameter
Operating and storage temperature range
Collector-emitter voltage
Collector current
Collector surge current
(τ < 10 µs)
Emitter-collector voltage
Total Power dissipation
Thermal resistance
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics (TA = 25 °C)
Parameter
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of chip area
Half angle
Capacitance
(VCE = 0 V, f = 1 MHz, E = 0)
Dark current
(VCE = 20 V, E = 0)
Rise and fall time
(IC = 1 mA, VCC = 5 V, RL = 1 kΩ)
SFH 300
Symbol
Top; Tstg
VCE
IC
ICS
VEC
Ptot
RthJA
VESD
Values
-40 ... 100
35
50
100
7
200
375
2000
Unit
°C
V
mA
mA
V
mW
K/W
V
(typ)
(typ)
(typ)
(typ)
Symbol
λS max
λ10%
A
LxW
(typ)
ϕ
(typ)
CCE
(typ (max)) ICE0
(typ)
tr, tf
Values
Unit
880
nm
(typ) 450 nm
... 1100
0.11
mm2
(typ) 0.55 x mm x
0.55
mm
± 25
°
7.5
pF
1 (≤ 50)
nA
10
µs
2016-01-04
2