RC28F320C3TC70 View Datasheet(PDF) - Intel
Part Name
Description
MFG CO.
'RC28F320C3TC70' PDF : 68 Pages View PDF
Intel£ Advanced+ Boot Block Flash Memory (C3)
Table 11. DC Current Characteristics (Sheet 3 of 3)
Sym
Parameter
VCC 2.7 V–3.6 V 2.7 V–2.85 V
VCCQ 2.7 V–3.6 V 1.65 V–2.5 V
Note Typ Max Typ Max
2.7 V–3.3 V
1.8 V–2.5 V
Typ Max
Unit
Test
Conditions
IPPR VPP Read Current
IPPW VPP Program Current
2 ±15 2
±15
2
±15 µA VPP ≤ VCC
1,4
50 200 50 200 50 200 µA VPP > VCC
VPP =VPP1,
0.05 0.1 0.05 0.1 0.05 0.1 mA Program in
Progress
1,4
VPP = VPP2
8 22 8
22
8
22
mA
(12v)
Program in
Progress
IPPE VPP Erase Current
VPP = VPP1,
0.05 0.1 0.05 0.1 0.05 0.1 mA Erase in
Progress
1,4
VPP = VPP2
8
22 16
45
16
45
mA
(12v) ,
Erase in
Progress
IPPES/ VCC Erase Suspend
IPPWS Current
VPP = VPP1,
Program or
0.2 5 0.2
5
0.2
5 µA Erase
Suspend in
Progress
1,4
VPP = VPP2
(12v) ,
50 200 50
200
50
200
µA
Program or
Erase
Suspend in
Progress
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25 °C.
2. The test conditions VCCMax, VCCQMax, VCCMin, and VCCQMin refer to the maximum or minimum VCC or
VCCQ voltage listed at the top of each column. VCCMax = 3.3 V for 0.25µm 32-Mbit devices.
3. Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS
inputs).
4. Sampled, not 100% tested.
5. ICCES or ICCWS is specified with device de-selected. If device is read while in erase suspend, current draw
is sum of ICCES and ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS
and ICCR.
Datasheet
37
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