RF2125PCBA View Datasheet(PDF) - RF Micro Devices
Part Name
Description
MFG CO.
'RF2125PCBA' PDF : 6 Pages View PDF
2
Typical Applications
• PCS Communication Systems
• Digital Communication Systems
• DECT Cordless Applications
RF2125
HIGH POWER LINEAR AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
2
Product Description
The RF2125 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta-
tions requiring linear amplification operating between
1500MHz and 2200MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead
ceramic package with a backside ground. The device is
self-contained with the exception of the output matching
network and power supply feed line. It produces a typical
output power level of 1W.
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
RF IN 1
8 RF OUT
RF IN 2
7 RF OUT
PC 3
VCC 4
BIAS
CIRCUIT
6 RF OUT
5 RF OUT
PACKAGE BASE
GND
Functional Block Diagram
.315
.305
.166
SQ
1
.050
.057 MAX
.004
.017
.000
.013
4°MAX
0°MIN
.180 SQ MAX
Metal lid and base, gold plated
.017
.006
.013
.004
Package Style: SOP-8-C
Features
• Single 2.7V to 7.5V Supply
• 1W Output Power
• 14dB Gain
• 45% Efficiency
• Power Down Mode
• 1500MHz to 2200MHz Operation
Ordering Information
RF2125
High Power Linear Amplifier
RF2125 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A7 010112
2-61
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