RF3854PCBA View Datasheet(PDF) - RF Micro Devices

Part Name

Description

MFG CO.

RF3854PCBA

LOW NOISE, MULTI-MODE, QUAD-BAND, QUADRATURE MODULATOR AND PA DRIVER

RF Micro Devices 

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RF3854

Parameter

Specification

Unit

Min.

Typ.

Max.

Condition

I/Q Baseband Inputs

Baseband Input Voltage

1.15

1.25

V

Common mode voltage

Baseband Input Level

EDGE

W-CDMA

GMSK

Baseband Input Impedance

1.2

0.8

1.0

100 k||1 pF

VP-P

Differential

VP-P

1DPCCH+1DPDCH. See Note 1.

VP-P

Differential

Ω

Measured at 100kHz

Input Bandwidth

EDGE 0.7

1.0

MHz

W-CDMA 8.0

11.0

MHz

Baseband Filter Attenuation

EDGE 20

dB

At 20MHz

W-CDMA 10

dB

At 40MHz

Baseband Input DC Current

-10

0

10

μA

Gain Control

Gain Control Voltage

Gain Control Impedance

0.2

2.2

V

10

kΩ

Output Performance with BTS waveform: W-CDMA test model I, 64 DPCH

Wideband Mode

Mode=Wideband FLOx1 (see Logic Control Truth Table for Mode Control

Settings)

Frequency

2110

2170

MHz

VCC=3.3V, VGC=1.6V

Output Power

-14

dBm

Adjacent Channel Power

-65

dBc

ACP measured in 3.84MHz channel, 5MHz off-

set from carrier

Noise Floor

-150

dBm/Hz ±40MHz offset from carrier

Note 1: In low power mode it is recommended that the IQ level be reduced to 0.4VP-P. If IQ level is >0.4VP-P, this mode should be used for W-

CDMA TX power levels below -20dBm (measured at antenna).

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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A1 DS070313

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