RFD16N02LSM9A View Datasheet(PDF) - Harris Semiconductor
Part Name
Description
MFG CO.
'RFD16N02LSM9A' PDF : 10 Pages View PDF
RFD16N02L, RFD16N02LSM
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING
20
15
10
5
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
0.1 0.1
.05
.02
.01
0.01
10-5
SINGLE PULSE
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x RθJC x ZθJC + TC
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
TC = 25oC
TJ = MAX RATED
100
100µs
1ms
10
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
1
VDSS MAX = 20V
10
100ms
DC
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
500
VGS = 10V
VGS = 5V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 175 - TC
150
100
TC = 25oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 5. PEAK CURRENT CAPABILITY
3
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