S3M View Datasheet(PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
Part Name
Description
MFG CO.
'S3M' PDF : 2 Pages View PDF
1
2
Plastic-Encapsulate Diodes
S3A--- S3M Typical Characteristics
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
3.5
3.0
2.5
2.0
1.5
1.0
RESISTIVE OR
INDUCTIVE LOAD
0.5 P. C. BOARD MOUNTED ON 10mm2
PAD AREAS
0
50 60 70 80 90 100 110 120 130 140 150 165
o
LEAD TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
200
100
FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
Tj=1250C
10
1
Tj=250C
0.1
0
20
40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
50
8.3ms Single Half Sine Wave
JEDEC Method
Tj=Tj max
10
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
100
50
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
30
10
3.0
1.0
0.3
Tj=250C
f=1.0MHz
0.1
Vsig=50mVp-p
10
5
1
5
10
50
100
REVERSE VOLTAGE. (V)
0.03
Tj=250C
PULSE WIDTH-300 S
2% DUTY CYCLE
0.01
0.6 0.7
0.8
0.9 1.0
1.2 1.4 1.6
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
1W
OSCILLOSCOPE
NON
(NOTE 1)
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P2
Share Link: 
