S9014 View Datasheet(PDF) - DC COMPONENTS
Part Name
Description
MFG CO.
'S9014' PDF : 2 Pages View PDF
1
2
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
S9014
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in pre-amplifier of low level and
low noise.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
50
V
45
V
5
V
100
mA
450
mW
+150
oC
-55 to +150 oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
5oTyp. 5oTyp. (1.0.2570)Typ
Dimensions in inches and (millimeters)
E(Rlaeticntgrsicaat 2l5CoChaamrabicentet treimstpiecrsature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
50
-
Collector-Emitter Breakdown Voltage BVCEO 45
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1) VCE(sat)
-
Base-Emitter Saturation Voltage(1)
VBE(sat)
-
-
0.14
0.84
Base-Emitter On Voltage
DC Current Gain(1)
Transition Frequency
VBE(on)
hFE
fT
0.58
60
150
0.63
280
270
Output Capacitance
Cob
-
2.2
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
50
50
0.3
1
0.7
1000
-
3.5
Classification of hFE
Rank
A
Range
60~150
B
100~300
C
200~600
D
400~1000
Unit
V
V
V
nA
nA
V
V
V
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=2mA, VCE=5V
IC=1mA, VCE=5V
IC=10mA, VCE=5V
VCB=10V, f=1MHz, IE=0
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